0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD780A features micro package. high dc current gain. h fe: 200typ.(v ce =1.0v,i c =50ma). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5.0 v collector current i c 300 a total power dissipation at 25 ambient temperature p t 200 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =50v,i e = 0 100 na emitter cutoff current i ebo v eb =5.0v,i c = 0 100 na dc current gain * h fe v ce =1.0v,i c = 50 ma 110 200 400 base to emitter voltage * v be v ce =6.0v,i c = 10 ma 600 645 700 mv collector saturation voltage * v ce(sat) i c = 300 ma, i b = 30 ma 0.15 0.6 v output capacitance c ob v cb =6.0v,i e = 0 , f = 1.0 mhz 7.0 pf gain bandwidth product f t v ce =6.0v,i e = -10 ma 140 mhz * pulsed: pw 350 s, duty cycle 2% h fe classification marking d51 d52 d53 d54 d55 hfe 110 180 135 220 170 270 200 320 250 400 smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|
